Multilayer Metallization Systems of Submicron Integrated Circuits

Atomistic simulations of deep submicron interconnect metallization

Damascene approaches are widely used for creating microelectronic interconnects. Successful implementation of the process is reliant upon the deposition of a refractory metal or metal nitride liner coating. It functions as a diffusion barrier layer to suppress transport of subsequently deposited interconnect metals into the surrounding dielectric. The development of vapor-phase processes for th...

Harmony: static noise analysis of deep submicron digital integrated circuits

As technology scales into the deep submicron regime, noise immunity is becoming a metric of comparable importance to area, timing, and power for the analysis and design of very large scale integrated (VLSI) systems. A metric for noise immunity is defined, and a static noise analysis methodology based on this noise-stability metric is introduced to demonstrate how noise can be analyzed systemati...

Electromigration in submicron interconnect features of integrated circuits

Design Challenges for Deep Submicron High Frequency Integrated Circuits

Cursa continuă pentru reducerea dimensiunilor fizice în circuitele integrate este limitată în prezent de considerente fizice, tehnologice şi economice. Subiectul acestei lucrări este trecerea în revistă în primele două secţiuni a unora dintre problemele apărute datorită reducerii dimensiunilor tranzistoarelor şi a prelucrării tehnologice, precum şi a principalelor probleme întâlnite în proiecta...

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flipflop based on a sense amplifier and a photon-emitting device. This method can be used even with deepsubmicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the ...